BAT721,215 NXP Semiconductors, BAT721,215 Datasheet - Page 5

• Manufacturer Part Number: BAT721,215
• Description: DIODE SCHOTTKY 40V 200MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAT721,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Current - Reverse Leakage @ Vr: 15µA @ 30V
• Voltage - Forward (vf) (max) @ If: 550mV @ 200mA
• Voltage - Dc Reverse (vr) (max): 40V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Current - Average Rectified (io): 200mA (DC)
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 15 uA @ 30 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934051290215::BAT721 T/R::BAT721 T/R

NXP Semiconductors
1PS76SB21_BAT721_SER_6
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse voltage; typical values
(mA)
(1) T
(2) T
(3) T
(4) T
I
10
F
10
10
10
1
3
2
1
voltage; typical values
T
0
amb
amb
amb
amb
amb
= 125 C
= 85 C
= 25 C
= 40 C
= 25 C; f = 1 MHz
(1)
200
(2)
(3)
(4)
400
(pF)
C
10
d
10
1
2
V
0
F
006aaa689
(mV)
Rev. 06 — 21 December 2006
600
10
1PS76SB21; BAT721 series
20
Fig 2. Reverse current as a function of reverse
(mA)
I
R
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
10
1
30
1
2
3
4
5
6
voltage; typical values
0
amb
amb
amb
amb
Schottky barrier diodes in small packages
V
R
= 125 C
= 85 C
= 25 C
= 40 C
mbk574
(V)
40
10
(1)
(2)
(3)
(4)
20
30
© NXP B.V. 2006. All rights reserved.
V
006aaa690
R
(V)
40
5 of 11