PMEG6010ER,115 NXP Semiconductors, PMEG6010ER,115 Datasheet - Page 27

• Manufacturer Part Number: PMEG6010ER,115
• Description: SCHOTTKY RECT 60V 10A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010ER,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 60 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061463115

52
General purpose bipolar transistors
Medium frequency transistors
Schmitt trigger
Package
Size (mm)
P
Key features


Key benefits


Key applications


Package
Size (mm)
P
tot
tot
Polarity
Low current (max. 100 mA)
Low voltage (max. 30 and 6 V)
Reduced component count and pick-and-place costs
Smaller designs
General purpose switching and amplification
Schmitt trigger applications
NPN
PNP
(mW)
(mW)
Polarity
NPN
PNP
V
CEO
15
20
40
30
40
(V)
V
CEO
I
C
100
(mA)
25
30
25
25
25
(V) TR1
30
30
h
FE
40
40
65
67
25
50
min
V
CEO
(V) TR2
6
6
h
FE
225
220
85
50
max
-
-
f
T
typ (MHz)
> 275
> 325
500
260
380
250
I
C
100
100
(mA)
2.9 x 1.3 x 1.0
SOT23
BF570
BFS20
BFS19
BF840
BF824
BF550
250
Schmitt trigger
h
FE
110
220
min
SOT323 (SC-70)
2.0 x 1.25 x 0.95
BFS20W
BF824W
R c
TR2
200
1
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
h
FE
800
475
max
R2
R2
V
i
4
V
CEsat
R1
250
250
typ (mV)
TR1
2
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
R c
mgd829
V
o
2.9 x 1.3 x 1.0
SOT143B
BCV63 / B
BCV64B
250
General purpose bipolar transistors
MOSFET driver
Package
Size (mm)
P
Configuration
Contains
General purpose transistors
Switching transistors -
reduced storage time
Low V
Low V
Key features



Key benefits


Key applications



tot
Three different configurations
Types available with standard, switching and
low V
Small footprint packages
Reduced component count
Smaller end products
MOSFET driver
Bipolar power transistor driver
Push-pull driver
(mW)
CEsat
CEsat
, high h
(BISS) transistors -
CEsat
(BISS) transistors
FE
and I
C
I
C
0.1
0.6
1.0
(A)
I
CM
0.2
1.0
2.0
(A)
PMD9050D
400
MOSFET driver with hardware
output disable function
R1 = R2 (kΩ)
2.2
4.7
10
-
-
-
SOT457 (SC-74)
2.9 x 1.5 x 1.0
400
PMD9010D
PMD9001D
PMD9002D
PMD9003D
BCV65 (SOT143B)
PMD2001D
PMD3001D
High-side MOSFET driver
with level shifter function
580
53