PMEG2020AEA,115 NXP Semiconductors, PMEG2020AEA,115 Datasheet - Page 3

• Manufacturer Part Number: PMEG2020AEA,115
• Description: SCHOTTKY RECT 20V 2A SOD323
• Manufacturer: NXP Semiconductors

Specifications of PMEG2020AEA,115

• Package / Case: SC-76, SOD-323, UMD2
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Voltage - Forward (vf) (max) @ If: 525mV @ 2A
• Voltage - Dc Reverse (vr) (max): 20V
• Capacitance @ Vr, F: 70pF @ 5V, 1MHz
• Current - Average Rectified (io): 2A (DC)
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 2 A
• Max Surge Current: 9 A
• Configuration: Single
• Forward Voltage Drop: 0.525 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057933115::PMEG2020AEA T/R::PMEG2020AEA T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
3. Device mounted on a on an FR4 printed-circuit board with copper clad 10 x 10 mm.
4. Soldering point of cathode tab.
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Feb 26
V
I
I
I
T
T
T
R
R
R
V
I
C
SYMBOL
F
FRM
FSM
j
R
SYMBOL
SYMBOL
stg
j
amb
R
= 25 °C unless otherwise specified.
F
20 V, 2 A very low V
barrier rectifier in SOD323 (SC-76) package
th(j-a)
th(j-a)
th(j-s)
d
P
I
F
R
(AV) rating will be available on request.
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
thermal resistance from junction to ambient
thermal resistance from junction to ambient
thermal resistance from junction to solder point note 4
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
forward voltage
reverse current
diode capacitance
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
PARAMETER
F
MEGA Schottky
see Fig.2; note 1
V
V
V
V
R
R
R
R
I
I
I
I
T
t
t = 8 ms square wave
F
F
F
F
p
= 5 V; see Fig.3
= 10 V
= 20 V
sp
= 5 V; f = 1 MHz; see Fig.4
= 0.01 A
= 0.1 A
= 1 A
= 2 A
≤ 1 ms; δ ≤ 0.25
≤ 55 °C
3
CONDITIONS
notes 1 and 2
notes 2 and 3
CONDITIONS
CONDITIONS
−
−
−
−
−65
−
−65
200
265
380
450
15
20
50
55
MIN.
TYP.
VALUE
PMEG2020AEA
450
210
90
20
2
7
9
+150
150
+150
220
290
430
525
50
80
200
70
Product data sheet
MAX.
MAX.
UNIT
K/W
K/W
K/W
V
A
A
A
°C
°C
°C
mV
mV
mV
mV
μA
μA
μA
pF
UNIT
UNIT
R
and