PMEG2010AEB,115 NXP Semiconductors, PMEG2010AEB,115 Datasheet

SCHOTTKY RECT 20V 6A SOT523

PMEG2010AEB,115

Manufacturer Part Number
PMEG2010AEB,115
Description
SCHOTTKY RECT 20V 6A SOT523
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMEG2010AEB,115

Package / Case
SC-79, SOD-523
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
1.5mA @ 20V
Voltage - Forward (vf) (max) @ If
620mV @ 1A
Voltage - Dc Reverse (vr) (max)
20V
Capacitance @ Vr, F
25pF @ 1V, 1MHz
Current - Average Rectified (io)
1A (DC)
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
1 A
Max Surge Current
6 A
Configuration
Single
Forward Voltage Drop
0.62 V
Maximum Reverse Leakage Current
1500 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057757115::PMEG2010AEB T/R::PMEG2010AEB T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
PMEG2010AEB
20 V, 1 A ultra low V
MEGA
F
Schottky barrier rectifier in
SOD523 package
Product data sheet
2003 Dec 03

Related parts for PMEG2010AEB,115

PMEG2010AEB,115 Summary of contents

Page 1

DATA SHEET PMEG2010AEB ultra low V Schottky barrier rectifier in SOD523 package Product data sheet DISCRETE SEMICONDUCTORS M3D319 MEGA F 2003 Dec 03 ...

Page 2

... NXP Semiconductors ultra low V barrier rectifier in SOD523 package FEATURES • Forward current: 1.0 A • Reverse voltage • Ultra low forward voltage • Ultra small SMD package. APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion • Voltage clamping • Inverse-polarity protection • ...

Page 3

... NXP Semiconductors ultra low V barrier rectifier in SOD523 package LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V continuous reverse voltage R I continuous forward current F I repetitive peak forward current FRM I non-repetitive peak forward current FSM T storage temperature ...

Page 4

... NXP Semiconductors ultra low V barrier rectifier in SOD523 package CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V forward voltage F I continuous reverse current R C diode capacitance d Note ≤ 300 μs; δ ≤ 0.02. 1. Pulse test 2003 Dec 03 MEGA Schottky F CONDITIONS 100 mA ...

Page 5

... NXP Semiconductors ultra low V barrier rectifier in SOD523 package GRAPHICAL DATA (mA (1) (2) ( − 0.2 0 °C. (1) T amb = 25 °C. (2) T amb = −40 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values (pF ° MHz; T amb Fig.4 Diode capacitance as a function of reverse voltage ...

Page 6

... NXP Semiconductors ultra low V barrier rectifier in SOD523 package PACKAGE OUTLINE Plastic surface mounted package; 2 leads (1) OUTLINE VERSION IEC SOD523V 2003 Dec 03 MEGA Schottky REFERENCES JEDEC JEITA SC-79 6 PMEG2010AEB 0 0.5 scale DIMENSIONS (mm are the original dimensions) UNIT 0.34 0.17 0.65 1.25 mm 0.58 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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