BAT720,215 NXP Semiconductors, BAT720,215 Datasheet

DIODE SCHOTTKY 40V 500MA SOT-23

BAT720,215

Manufacturer Part Number
BAT720,215
Description
DIODE SCHOTTKY 40V 500MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT720,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
100µA @ 35V
Voltage - Forward (vf) (max) @ If
550mV @ 500mA
Voltage - Dc Reverse (vr) (max)
40V
Capacitance @ Vr, F
90pF @ 0V, 1MHz
Current - Average Rectified (io)
500mA (DC)
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.5 A
Max Surge Current
2 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934051280215::BAT720 T/R::BAT720 T/R
Product data sheet
Supersedes data of 1999 May 26
DATA SHEET
fpage
BAT720
Schottky barrier diode
DISCRETE SEMICONDUCTORS
M3D088
2003 Mar 25

Related parts for BAT720,215

BAT720,215 Summary of contents

Page 1

DATA SHEET fpage BAT720 Schottky barrier diode Product data sheet Supersedes data of 1999 May 26 DISCRETE SEMICONDUCTORS M3D088 2003 Mar 25 ...

Page 2

... NXP Semiconductors Schottky barrier diode FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits. DESCRIPTION Planar Schottky barrier diode with an ...

Page 3

... NXP Semiconductors Schottky barrier diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Refer to SOT23 standard mounting conditions. 2003 Mar 25 CONDITIONS I = 500 mA; see Fig.2 ...

Page 4

... NXP Semiconductors Schottky barrier diode GRAPHICAL DATA 3 10 handbook, halfpage I F (mA (1) (2) 10 (3) 1 −1 10 150 250 350 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values handbook, halfpage C d (pF) ...

Page 5

... NXP Semiconductors Schottky barrier diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Mar scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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