BAT754,215 NXP Semiconductors, BAT754,215 Datasheet

DIODE SCHTK DUAL 30V 200MA SOT23

BAT754,215

Manufacturer Part Number
BAT754,215
Description
DIODE SCHTK DUAL 30V 200MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT754,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
2µA @ 25V
Voltage - Forward (vf) (max) @ If
600mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Current - Average Rectified (io)
200mA (DC)
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Single
Forward Voltage Drop
0.42 V @ 0.03 A
Maximum Reverse Leakage Current
2 uA @ 25 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055714215::BAT754 T/R::BAT754 T/R
Product data sheet
Supersedes data of 1999 Aug 05
DATA SHEET
fpage
BAT754 series
Schottky barrier (double) diodes
DISCRETE SEMICONDUCTORS
M3D088
2003 Mar 25

Related parts for BAT754,215

BAT754,215 Summary of contents

Page 1

DATA SHEET fpage BAT754 series Schottky barrier (double) diodes Product data sheet Supersedes data of 1999 Aug 05 DISCRETE SEMICONDUCTORS M3D088 2003 Mar 25 ...

Page 2

... NXP Semiconductors Schottky barrier (double) diodes FEATURES • Very low forward voltage • Guard ring protected • Small plastic SMD package • Low diode capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • Low power consumption applications, e ...

Page 3

... NXP Semiconductors Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per diode V continuous reverse voltage R I continuous forward current F I repetitive peak forward current FRM I non-repetitive peak forward current FSM T storage temperature ...

Page 4

... NXP Semiconductors Schottky barrier (double) diodes GRAPHICAL DATA 3 10 handbook, halfpage I F (1) (mA (1) (2) ( 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.6 Forward current as a function of forward voltage; typical values. 15 handbook, halfpage C d (pF ° MHz; T amb Fig.8 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Schottky barrier (double) diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Mar scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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