BAT54T,115 NXP Semiconductors, BAT54T,115 Datasheet - Page 4

• Manufacturer Part Number: BAT54T,115
• Description: DIODE SCHOTTKY 200MA SOT416 SC75
• Manufacturer: NXP Semiconductors

Specifications of BAT54T,115

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: EMT3 (SOT-416, SC-75-3)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063958115

NXP Semiconductors
BAT54T_1
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
10
I
F
10
10
10
−1
1
3
2
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
0
(1)
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
(2)
(3)
amb
0.4
= 25 °C
(1)
(2)
0.8
(pF)
(3)
C
15
d
10
0
5
0
V
F
(V)
msa892
Rev. 01 — 14 December 2009
1.2
10
Fig 2.
20
(μA)
(1) T
(2) T
(3) T
10
I
10
R
10
10
−1
1
3
2
0
Reverse current as a function of reverse
voltage; typical values
V
amb
amb
amb
R
(V)
msa891
= 125 °C
= 85 °C
= 25 °C
30
10
Single Schottky barrier diode
20
© NXP B.V. 2009. All rights reserved.
V
R
BAT54T
(1)
(2)
(3)
(V)
msa893
30
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