1PS74SB23,125 NXP Semiconductors, 1PS74SB23,125 Datasheet - Page 4

• Manufacturer Part Number: 1PS74SB23,125
• Description: DIODE SCHOTTKY 25V 1MA SC74
• Manufacturer: NXP Semiconductors

Specifications of 1PS74SB23,125

• Package / Case: SC-74-6
• Voltage - Forward (vf) (max) @ If: 450mV @ 1A
• Voltage - Dc Reverse (vr) (max): 25V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 1mA @ 25V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 25 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single Quad Anode Dual Cathode
• Forward Voltage Drop: 0.45 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 1PS74SB23 T/R; 1PS74SB23 T/R; 934054921125

Philips Semiconductors
GRAPHICAL DATA
2003 Aug 04
handbook, halfpage
handbook, halfpage
Schottky barrier diode
(1) T
(2) T
(3) T
(4) T
Fig.2
f = 1 MHz; T
Fig.4
(mA)
I F
(pF)
C d
10
10
10
10
10
10
amb
amb
amb
amb
10
1
4
3
2
3
2
0
0
= 125 C.
= 100 C.
= 75 C.
= 25 C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
= 25 C.
200
10
(1)
(2)
(3)
(4)
400
20
600
V R (V)
V F (mV)
MBL886
MBK571
800
30
4
handbook, halfpage
(1) T
(2) T
(3) T
(4) T
Fig.3
( A)
I R
10
10
10
10
amb
amb
amb
amb
10
1
5
4
3
2
0
= 125 C.
= 100 C.
= 75 C.
= 25 C.
Reverse current as a function of reverse
voltage; typical values.
10
20
1PS74SB23
Product specification
(1)
(2)
(3)
(4)
V R (V)
MHB970
30