1PS79SB31,135 NXP Semiconductors, 1PS79SB31,135 Datasheet - Page 4
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1PS79SB31,135
Manufacturer Part Number
1PS79SB31,135
Description
DIODE SCHOTTKY 30V 200MA SC79
Manufacturer
NXP Semiconductors
Datasheet
1.1PS79SB31315.pdf
(7 pages)
Specifications of 1PS79SB31,135
Package / Case
SC-79, SOD-523
Voltage - Forward (vf) (max) @ If
500mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
30µA @ 10V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
25pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
30 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
1PS79SB31 /T3
1PS79SB31 /T3
934056795135
1PS79SB31 /T3
934056795135
NXP Semiconductors
GRAPHICAL DATA
2002 Jan 11
handbook, halfpage
handbook, halfpage
Schottky barrier diode
(1) T
(2) T
(3) T
Fig.2
(1) f = 1 MHz; T
Fig.4
(mA)
(pF)
C d
I F
10
10
40
30
20
10
10
amb
amb
amb
0
1
3
2
0
0
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
(1)
amb
0.2
(2) (3)
= 25 °C.
10
0.4
0.6
20
V R (V)
0.8
V F (V)
MGU519
MGU517
30
1
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(μA)
I R
10
10
10
10
10
−1
amb
amb
amb
1
4
3
2
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
(1)
(2)
(3)
10
20
1PS79SB31
Product data sheet
V R (V)
MGU518
30