BAS321,115 NXP Semiconductors, BAS321,115 Datasheet - Page 7

DIODE GP 250V 250MA SOD323

BAS321,115

Manufacturer Part Number
BAS321,115
Description
DIODE GP 250V 250MA SOD323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS321,115

Package / Case
SC-76, SOD-323, UMD2
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
100nA @ 200V
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
200V
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Current - Average Rectified (io)
250mA (DC)
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
250 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.25 A
Max Surge Current
9 A
Reverse Current Ir
0.1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055352115::BAS321 T/R::BAS321 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS321,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
PACKAGE OUTLINE
2004 Jan 26
Plastic surface-mounted package; 2 leads
General purpose diode
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode
UNIT
mm
OUTLINE
VERSION
SOD323
1.1
0.8
A
max
0.05
A
1
1
0.40
0.25
b
p
IEC
0.25
0.10
(1)
c
1.8
1.6
D
H
D
D
1.35
1.15
JEDEC
E
REFERENCES
0
H
2.7
2.3
D
0.45
0.15
2
L
A
p
0.25
0.15
JEITA
SC-76
Q
scale
b
X
v
p
1
7
M
0.2
v
A
A
2 mm
A
1
detail X
PROJECTION
EUROPEAN
E
L
p
Product data sheet
ISSUE DATE
BAS321
Q
c
03-12-17
06-03-16
SOD323

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