RB751S40,115 NXP Semiconductors, RB751S40,115 Datasheet - Page 3

DIODE SCHOTTKY 40V 120MA SOD-523

RB751S40,115

Manufacturer Part Number
RB751S40,115
Description
DIODE SCHOTTKY 40V 120MA SOD-523
Manufacturer
NXP Semiconductors
Datasheet

Specifications of RB751S40,115

Package / Case
SC-79, SOD-523
Voltage - Forward (vf) (max) @ If
370mV @ 1mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
120mA (DC)
Current - Reverse Leakage @ Vr
500nA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
2pF @ 1V, 1MHz
Mounting Type
Surface Mount
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061303115
RB751S40 T/R
RB751S40 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB751S40,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
RB751_SER_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Table 8.
T
[1]
Symbol
V
V
I
I
P
T
T
T
Symbol
R
Symbol
V
I
C
F
FSM
R
amb
j
amb
stg
RRM
R
tot
F
th(j-a)
d
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Pulse test: t
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Limiting values
Thermal characteristics
Characteristics
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
p
RB751CS40
RB751S40
RB751V40
RB751CS40
RB751S40
RB751V40
300 s;
Rev. 01 — 21 May 2007
0.02.
Conditions
I
V
V
F
R
R
= 1 mA
= 30 V
= 1 V; f = 1 MHz
Conditions
square wave;
t
T
p
Conditions
in free air
amb
< 10 ms
25 C
Schottky barrier single diodes
[1]
[2]
[2]
[1]
[2]
[2]
[1]
RB751 series
Min
-
-
-
-
-
-
-
-
Min
-
-
-
Min
-
-
-
65
65
Typ
-
-
-
Typ
-
-
2
© NXP B.V. 2007. All rights reserved.
Max
40
40
120
200
250
280
280
150
+150
+150
Max
500
450
450
Max
370
0.5
-
Unit
V
V
mA
mA
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
3 of 10
Unit
mV
pF
A

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