BAS116,235 NXP Semiconductors, BAS116,235 Datasheet

DIODE SW EPITAXIAL MED-SPD SOT23

BAS116,235

Manufacturer Part Number
BAS116,235
Description
DIODE SW EPITAXIAL MED-SPD SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS116,235

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
215mA (DC)
Current - Reverse Leakage @ Vr
5nA @ 75V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
3µs
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934032170235
BAS116 /T3
BAS116 /T3
Product data sheet
Supersedes data of 1999 May 26
dbook, halfpage
DATA SHEET
BAS116
Low-leakage diode
DISCRETE SEMICONDUCTORS
M3D088
2003 Dec 12

Related parts for BAS116,235

BAS116,235 Summary of contents

Page 1

DATA SHEET dbook, halfpage BAS116 Low-leakage diode Product data sheet Supersedes data of 1999 May 26 DISCRETE SEMICONDUCTORS M3D088 2003 Dec 12 ...

Page 2

... NXP Semiconductors Low-leakage diode FEATURES • Plastic SMD package • Low leakage current: typ • Switching time: typ. 0.8 µs • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 500 mA. APPLICATION • Low leakage current applications in surface mounted circuits ...

Page 3

... NXP Semiconductors Low-leakage diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th(j-tp) R thermal resistance from junction to ambient th(j-a) Note 1 ...

Page 4

... NXP Semiconductors Low-leakage diode GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 100 0 0 100 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − °C prior to surge. Based on square wave currents Fig ...

Page 5

... NXP Semiconductors Low-leakage diode (nA) 10 (1) 1 −1 10 (2) −2 10 − 100 (1) Maximum values. (2) Typical values Fig.5 Reverse current as a function of junction temperature. handbook, full pagewidth D.U. Ω ( mA. R Fig.7 Reverse recovery time test circuit and waveforms. 2003 Dec 12 mlb754 2 handbook, halfpage ...

Page 6

... NXP Semiconductors Low-leakage diode PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Dec scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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