BAS21,215 NXP Semiconductors, BAS21,215 Datasheet - Page 4

• Manufacturer Part Number: BAS21,215
• Description: DIODE SW 200V 200MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAS21,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: General Purpose Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1.7 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 250V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 0.1uA
• Peak Non-repetitive Surge Current (max): 1.7A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 50ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1598-2; 933502040215; BAS21 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
General purpose diodes
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
BAS19
BAS20
BAS21
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
I
R
R
I
I
V
V
V
V
V
V
= 30 mA; R
= 3 mA; see Fig.8
F
F
R
R
R
R
R
R
= 100 mA
= 200 mA
= 100 V
= 100 V; T
= 150 V
= 150 V; T
= 200 V
= 200 V; T
note 1
4
R
L
= 0; see Fig.6
= 100 Ω; measured at
CONDITIONS
j
j
j
= 150 °C
= 150 °C
= 150 °C
CONDITIONS
F
= 30 mA to
BAS19; BAS20; BAS21
1
1.25
100
100
100
100
100
100
5
50
VALUE
MAX.
Product data sheet
330
500
V
V
nA
µA
nA
µA
nA
µA
pF
ns
UNIT
UNIT
K/W
K/W