BAS21,215 NXP Semiconductors, BAS21,215 Datasheet - Page 3

DIODE SW 200V 200MA HS SOT23

BAS21,215

Manufacturer Part Number
BAS21,215
Description
DIODE SW 200V 200MA HS SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS21,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
General Purpose Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
0.2 A
Max Surge Current
1.7 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Rectifier Type
Switching Diode
Peak Rep Rev Volt
250V
Avg. Forward Curr (max)
0.2A
Rev Curr
0.1uA
Peak Non-repetitive Surge Current (max)
1.7A
Forward Voltage
1.25V
Operating Temp Range
-65C to 150C
Package Type
TO-236AB
Rev Recov Time
50ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1598-2
933502040215
BAS21 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS21,215
Manufacturer:
NXP Semiconductors
Quantity:
19 200
Part Number:
BAS21,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BAS21,215
Quantity:
3 400
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
RRM
R
tot
General purpose diodes
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
PARAMETER
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
amb
t = 1 µs
t = 100 µs
t = 10 ms
= 25 °C; note 1
3
CONDITIONS
j
= 25 °C prior to
BAS19; BAS20; BAS21
−65
MIN.
120
200
250
100
150
200
200
625
9
3
1.7
250
+150
150
Product data sheet
MAX.
V
V
V
V
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT

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