BAW62,143 NXP Semiconductors, BAW62,143 Datasheet - Page 3

• Manufacturer Part Number: BAW62,143
• Description: DIODE SW HI-SPEED 75V DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAW62,143

• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933101220143

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 17
V
I
C
t
V
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C; unless otherwise specified.
F
fr
High-speed diode
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
at I
when switched from I
t
R
r
= 20 ns; see Fig.8
I
I
I
V
V
V
V
V
= 10 mA; R
F
F
F
R
R
R
R
R
R
= 5 mA
= 100 mA
= 100 mA; T
= 1 mA; see Fig.7
= 20 V
= 50 V
= 75 V
= 20 V; T
= 75 V; T
lead length 10 mm
lead length 10 mm; note 1
3
CONDITIONS
R
L
= 0; see Fig.6
j
j
= 100 Ω; measured
= 150 °C
= 150 °C
j
= 100 °C
CONDITIONS
F
F
= 10 mA to
= 50 mA;
MIN.
620
−
−
−
−
−
−
−
−
−
−
VALUE
1 000
Product data sheet
MAX.
750
930
200
100
240
500
25
50
5
2
4
2.5
BAW62
mV
mV
mV
nA
nA
μA
μA
μA
pF
ns
V
UNIT
UNIT
K/W
K/W