BAV21,113 NXP Semiconductors, BAV21,113 Datasheet - Page 6

• Manufacturer Part Number: BAV21,113
• Description: DIODE GEN PURP 250V 250MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAV21,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: General Purpose Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 9 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933189210113; BAV21 T/R; BAV21 T/R

NXP Semiconductors
1999 May 25
handbook, halfpage
handbook, halfpage
General purpose diodes
V
Solid line; maximum values.
Dotted line; typical values.
Fig.5
(1) BAV21.
(2) BAV20.
Fig.7
(μA)
R
I R
V R
(V)
10
10
= V
300
200
100
10
10
10
−1
−2
0
1
Rmax
3
2
0
0
Reverse current as a function of junction
temperature.
Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
.
(1)
(2)
100
100
T amb (
T j (
o
C)
o
C)
MGL588
MGD009
200
200
6
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.6
1.4
1.2
1.0
0.8
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
10
BAV20; BAV21
V R (V)
Product data sheet
MGD005
20