15ETL06-1PBF Vishay, 15ETL06-1PBF Datasheet - Page 5

DIODE HYPERFAST 600V 15A TO262

15ETL06-1PBF

Manufacturer Part Number
15ETL06-1PBF
Description
DIODE HYPERFAST 600V 15A TO262
Manufacturer
Vishay
Series
FRED Pt™r
Datasheet

Specifications of 15ETL06-1PBF

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.05V @ 15A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
15A
Current - Reverse Leakage @ Vr
10µA @ 600V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
270ns
Mounting Type
Through Hole, Radial
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.05 V
Recovery Time
270 ns
Forward Continuous Current
15 A
Max Surge Current
250 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
15A
Forward Voltage Vf Max
1.05V
Reverse Recovery Time Trr Max
190ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
*15ETL06-1PBF
Document Number: 94005
Revision: 23-Jun-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
(1) dI
(2) I
(3) t
0
Discontinuous Mode PFC, 15 A FRED Pt
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
I
F
F
- reverse recovery time measured
/dt - rate of change of current
- peak reverse recovery current
Ultralow V
F
to point where a line passing
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
RRM
and 0.50 I
(1)
adjust
dI
F
F
/dt
dI
Hyperfast Rectifier for
F
/dt
RRM
L = 70 μH
G
VS-15ETL06SPbF, VS-15ETL06-1PbF
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
RRM
t
D.U.T.
/dt - peak rate of change of
b
RRM
DiodesEurope@vishay.com
dI
0.5 I
Q
(rec)M
rr
Q
=
RRM
b
rr
/dt
portion of t
t
(4)
rr
x I
(5)
®
2
RRM
Vishay Semiconductors
rr
rr
www.vishay.com
5

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