15ETL06-1PBF Vishay, 15ETL06-1PBF Datasheet - Page 3

• Manufacturer Part Number: 15ETL06-1PBF
• Description: DIODE HYPERFAST 600V 15A TO262
• Manufacturer: Vishay
• Series: FRED Pt™r

Specifications of 15ETL06-1PBF

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.05V @ 15A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 15A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 270ns
• Mounting Type: Through Hole, Radial
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.05 V
• Recovery Time: 270 ns
• Forward Continuous Current: 15 A
• Max Surge Current: 250 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 15A
• Forward Voltage Vf Max: 1.05V
• Reverse Recovery Time Trr Max: 190ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: *15ETL06-1PBF

Document Number: 94005
Revision: 23-Jun-10
100
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
1
0.4
0.01
0.1
10
0.6
0.00001
V
1
F
- Forward Voltage Drop (V)
0.8
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1.0
(thermal resistance)
0.0001
Discontinuous Mode PFC, 15 A FRED Pt
Single pulse
1.2
Ultralow V
T
T
T
Fig. 4 - Maximum Thermal Impedance Z
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
J
J
J
= 175 °C
= 150 °C
= 25 °C
100
10
1.4
0
0.001
t
1.6
100
1
- Rectangular Pulse Duration (s)
F
V
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Hyperfast Rectifier for
T
R
J
= 25 °C
- Reverse Voltage (V)
200
VS-15ETL06SPbF, VS-15ETL06-1PbF
300
0.01
400
0.001
0.01
100
thJC
0.1
10
500
1
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0
Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
0.1
600
Notes:
1. Duty factor D = t
2. Peak T
100
V
®
T
J
R
T
= 100 °C
J
- Reverse Voltage (V)
J
T
200
= 150 °C
Reverse Voltage
Vishay Semiconductors
= P
J
= 25 °C
T
J
DM
P
= 125 °C
DM
1
x Z
300
T
T
1
J
J
/t
t
1
thJC
= 175 °C
2
= 50 °C
t
2
.
+ T
400
C
T
J
= 75 °C
.
500
10
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600
3