EGP20G-E3/54 Vishay, EGP20G-E3/54 Datasheet - Page 3

• Manufacturer Part Number: EGP20G-E3/54
• Description: DIODE 2A 400V 50NS DO-204AC
• Manufacturer: Vishay

Specifications of EGP20G-E3/54

• Voltage - Forward (vf) (max) @ If: 1.25V @ 2A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 2 A @ Ta=55C
• Max Surge Current: 75 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 88583
Revision: 02-Jul-07
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Instantaneous Forward Characteristics
0.001
0.01
0.01
0.01
100
100
100
0.1
0.1
0.1
10
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
1
0.2
0.2
0
EGP20A ~ EGP20D
T
EGP20A ~ EGP20D
EGP20F ~ EGP20G
j
= 125 °C
T
0.4
j
T
= 125 °C
Percent of Peak Reverse Voltage (%)
j
Instantaneous Forward Voltage (V)
= 150 °C
Instantaneous Forward Voltage (V)
0.4
20
0.6
T
j
= 150 °C
0.8
0.6
40
T
T
T
j
j
j
= 150 °C
= 125 °C
= 100 °C
1
T
j
= 25 °C
T
0.8
60
j
1.2
= 25 °C
T
T
j
T
j
= 100 °C
j
= 25 °C
1.4
= 100 °C
1.0
80
1.6
100
1.8
1.2
0.001
0.01
100
140
120
100
100
0.1
10
0.1
80
60
40
20
10
Figure 6. Typical Reverse Leakage Characteristics
0
1
1
Figure 8. Typical Transient Thermal Impedance
0.1
0.01
0
EGP20F ~ EGP20G
Vishay General Semiconductor
Figure 7. Typical Junction Capacitance
Percent of Peak Reverse Voltage (%)
20
EGP20A thru EGP20G
EGP20A - EGP20D
EGP20F & EGP20G
0.1
1
t - Pulse Duration (s)
Reverse Voltage (V)
T
T
T
j
j
j
= 125 °C
= 100 °C
= 150 °C
40
10
1
T
j
= 25 °C
60
T
f = 1.0 MHz
V
J
sig
100
= 25 °C
10
= 50 mVp-p
80
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1000
100
100
3