SBYV26C-E3/54 Vishay, SBYV26C-E3/54 Datasheet - Page 3

• Manufacturer Part Number: SBYV26C-E3/54
• Description: DIODE GPP UFAST 1A 600V DO-41
• Manufacturer: Vishay
• Series: -r

Specifications of SBYV26C-E3/54

• Voltage - Forward (vf) (max) @ If: 2.5V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.5 V
• Recovery Time: 30 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 88735
Revision: 20-Aug-07
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Instantaneous Forward Characteristics
0.01
100
100
0.1
10
10
0.001
Figure 5. Typical Reverse Leakage Characteristics
0.01
1
1
100
0.1
10
1
0
1
0
0.5
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
1.0
Number of Cycles at 50 Hz
T
20
J
= 165 °C
1.5
T
10 ms Single Half Sine-Wave
40
[e-mail], [e-mail], [e-mail]
J
For technical questions within your region, please contact one of the following:
2.0
10
= T
T
T
J
J
J
Max.
Pulse Width = 300 µs
1 % Duty Cycle
= 25 °C
= 165 °C
T
2.5
J
60
= 125 °C
T
J
T
= 25 °C
J
3.0
= 125 °C
80
3.5
100
4.0
100
100
100
10
10
1
1
0.01
Figure 7. Typical Transient Thermal Impedance
0.1
Vishay General Semiconductor
Figure 6. Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
SBYV26C
www.vishay.com
100
100
3