SBYV26C-E3/54 Vishay, SBYV26C-E3/54 Datasheet

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SBYV26C-E3/54

Manufacturer Part Number
SBYV26C-E3/54
Description
DIODE GPP UFAST 1A 600V DO-41
Manufacturer
Vishay
Series
-r
Datasheets

Specifications of SBYV26C-E3/54

Voltage - Forward (vf) (max) @ If
2.5V @ 1A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.5 V
Recovery Time
30 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SBYV26C-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
288
Part Number:
SBYV26C-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SBYV26C-E3/54
Quantity:
566 500
Note:
(1) Peak reverse energy measured with 8/20 µs surge
Document Number: 88735
Revision: 20-Aug-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at T
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non repetitive peak reverse energy
Operating junction and storage temperature range
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
t
rr
F
L
= 85 °C (Fig. 1)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
DO-204AL (DO-41)
For technical questions within your region, please contact one of the following:
Glass Passivated Ultrafast Rectifier
A
(1)
= 25 °C unless otherwise noted)
175 °C
600 V
30 ns
1.0 A
1.3 V
30 A
SYMBOL
T
J
V
V
E
I
I
V
F(AV)
, T
FSM
RRM
RMS
RSM
DC
STG
FEATURES
TYPICAL APPLICATIONS
For
freewheeling application in switching mode converters
and
telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded plastic over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Cavity-free glass-passivated junction
• Ideal for printed circuit boards
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
use
inverters
Vishay General Semiconductor
in
high
- 65 to + 175
for
VALUE
600
420
600
1.0
5.0
30
frequency
consumer,
rectification
SBYV26C
computer
www.vishay.com
UNIT
mJ
°C
V
V
V
A
A
and
and
1

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SBYV26C-E3/54 Summary of contents

Page 1

... HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end SYMBOL V RRM V RMS F(AV) I FSM E RSM STG SBYV26C in high frequency rectification for consumer, computer VALUE UNIT 600 V 420 V 600 V 1 5.0 ...

Page 2

... Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on P.C.B. with 0.5 x 0.5" ( mm) copper pads (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) SBYV26C-E3/54 0.339 SBYV26C-E3/73 0.339 (1) SBYV26CHE3/54 0 ...

Page 3

... For technical questions within your region, please contact one of the following: Revision: 20-Aug-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 100 10 100 100 T = 125 ° 3.0 3.5 4 °C 80 100 SBYV26C Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 0 Reverse Voltage (V) Figure 6. Typical Junction Capacitance 1 0.01 ...

Page 4

... SBYV26C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) www.vishay.com For technical questions within your region, please contact one of the following: 4 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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