STTH1210G-TR STMicroelectronics, STTH1210G-TR Datasheet - Page 5

• Manufacturer Part Number: STTH1210G-TR
• Description: DIODE ULTRA FAST 1000V 12A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH1210G-TR

• Voltage - Forward (vf) (max) @ If: 2V @ 12A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 12A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 90ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-6093-2

STTH1210
Figure 11. Forward recovery time versus
Figure 13. Thermal resistance junction to
80
70
60
50
40
30
20
10
700
600
500
400
300
200
0
0
R
0
th(j-a)
t (ns)
fr
(°C/W)
5
dI
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e
100
F
10
/dt (typical values)
15
200
S
dI /dt(A/µs)
CU
F
20
(cm²)
cu
= 35 µm)
300
25
V
FR
30
= 1.5 x V
T
I
400
F
j
=125°C
= I
F(AV)
D²PAK
F
35
max.
500
40
Figure 12. Junction capacitance versus
100
10
1
1
C(pF)
reverse voltage applied (typical
values)
10
V (V)
R
100
Characteristics
V
osc
F=1MHz
T
=30mV
j
=25°C
RMS
1000
5/11