BY329X-1200,127 NXP Semiconductors, BY329X-1200,127 Datasheet - Page 3

• Manufacturer Part Number: BY329X-1200,127
• Description: DIODE RECT 1200V 8A SOD113
• Manufacturer: NXP Semiconductors

Specifications of BY329X-1200,127

• Voltage - Forward (vf) (max) @ If: 1.85V @ 20A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 1mA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 145ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, ITO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 934037680127; BY329X-1200; BY329X-1200

Philips Semiconductors
September 1998
Rectifier diodes
fast, soft-recovery
I
square wave current waveform; parameter D = duty
I
R
F
Fig.2. Maximum forward dissipation, P
Fig.3. Maximum forward dissipation, P
sinusoidal current waveform; parameter a = form
15
10
20
15
10
5
0
5
0
0
0
PF / W
PF / W
Rs = 0.03 Ohms
Vo = 1.25 V
Rs = 0.03 Ohms
Vo = 1.25 V
Fig.1. Definition of t
2
I
rrm
2
dI
dt
factor = I
0.1
Qs
F
4
4
cycle = t
0.2
IF(AV) / A
IF(AV) / A
BY329
BY329
2.8
trr
F(RMS)
6
4
p
/T .
I
rr
2.2
/I
0.5
, Q
F(AV)
8
1.9
s
t
p
.
and I
T
6
Ths(max) / C
Ths(max) / C
a = 1.57
10
25%
D =
D = 1.0
rrm
F
F
= f(I
= f(I
T
t
p
t
12
8
126
102
78
F(AV)
102
126
F(AV)
54
150
78
150
time
100%
);
);
3
I
F
Fig.4. Maximum non-repetitive rms forward current.
Fig.5. Typical and maximum forward characteristic;
= f(t
100
Fig.6. Maximum Q
90
80
70
60
50
40
30
20
10
p
0
); sinusoidal current waveform; T
0.1
1ms
10
30
20
10
1
0
IFS (RMS) / A
1
0
Qs / uC
IF / A
Tj = 150 C
Tj = 25 C
to surge with reapplied V
Tj = 150 C
Tj = 25 C
I
F
IFSM
10ms
= f(V
0.5
BY329F, BY329X series
F
); parameter T
-dIF/dt (A/us)
s
at T
VF / V
tp / s
0.1s
typ
10
1
2 A
j
= 25˚C and 150˚C
Product specification
1.5
1s
RWM
j
IF = 10 A
max
j
BY229F
= 150˚C prior
BY329
.
10 A
1 A
2 A
1 A
BY329
100
Rev 1.100
2
10s