BYT08P-400 STMicroelectronics, BYT08P-400 Datasheet - Page 4

• Manufacturer Part Number: BYT08P-400
• Description: DIODE FAST REC 8A 400V TO-220AC
• Manufacturer: STMicroelectronics

Specifications of BYT08P-400

• Voltage - Forward (vf) (max) @ If: 1.5V @ 8A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 15µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-6685-5; BYT08P-400

BYT08P-400 / BYT08PI-400
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.5
0.2
0.1
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
30
28
26
24
22
20
18
16
14
12
10
Fig. 9: Recovery current versus dI
10
4/7
8
6
4
2
0
1E-3
10
1
C(pF)
IRM(A)
K=[Zth(j-c)/Rth(j-c)]
= 0.5
90% confidence
= 0.2
= 0.1
Single pulse
Tj=100°C
IF=IF(av)
20
1E-2
dIF/dt(A/µs)
10
VR(V)
tp(s)
50
1E-1
F
/dt (per diode).
100
=tp/T
100
T
F=1MHz
Tj=25°C
tp
1E+0
200
200
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
Fig. 8: Recovery charges versus dI
diode).
250
200
150
100
Fig. 10: Transient peak forward voltage versus
dI
30
25
20
15
10
10.0
50
5
0
F
0
1.0
0.1
0
VFP(V)
10
/dt (per diode)
Qrr(nC)
0.0
90% confidence
IFM(A)
Tj=100°C
IF=IF(av)
90% confidence
Tj=100°C
IF=IF(av)
0.5
100
20
Typical values
Tj=100°C
1.0
200
dIF/dt(A/µs)
dIF/dt(A/µs)
Tj=100°C
1.5
VFM(V)
Tj=25°C
50
300
2.0
2.5
100
400
F
3.0
/dt (per
200
500
3.5