BAS40E6327 Infineon Technologies, BAS40E6327 Datasheet - Page 3
![DIODE SCHOTTKY 40V SOT-23](/photos/5/30/53067/448-sot-23_sml.jpg)
BAS40E6327
Manufacturer Part Number
BAS40E6327
Description
DIODE SCHOTTKY 40V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BAS_40-04_E6327.pdf
(15 pages)
Specifications of BAS40E6327
Voltage - Forward (vf) (max) @ If
1V @ 40mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
120mA (DC)
Current - Reverse Leakage @ Vr
1µA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
BAS40E6327XT
BAS40INTR
BAS40XTINTR
BAS40XTINTR
SP000010235
BAS40INTR
BAS40XTINTR
BAS40XTINTR
SP000010235
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS40E6327
Manufacturer:
Infineon Technologies
Quantity:
26 366
Part Number:
BAS40E6327HTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
1
Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
Forward voltage
I
I
I
Forward voltage matching
I
AC Characteristics
Diode capacitance
V
Differential forward resistance
I
Charge carrier life time
I
(BR)
F
F
F
F
F
F
R
R
V
= 1 mA
= 10 mA
= 40 mA
= 10 mA
= 10 mA, f = 10 kHz
= 25 mA
F
= 30 V
= 0 , f = 1 MHz
is the difference between lowest and highest V
= 10 µA
1)
A
= 25°C, unless otherwise specified
F
in a multiple diode component.
3
Symbol
V
I
V
C
R
R
(BR)
F
T
F
rr
V
F
min.
250
350
600
40
-
-
-
-
-
BAS40.../BAS140W
Values
310
450
720
typ.
10
3
-
-
-
-
max.
1000
380
500
100
2007-04-19
20
1
5
-
-
Unit
V
µA
mV
pF
ps