SMBD914E6327 Infineon Technologies, SMBD914E6327 Datasheet - Page 2

• Manufacturer Part Number: SMBD914E6327
• Description: DIODE SWITCHING 75V SOT-23
• Manufacturer: Infineon Technologies

Specifications of SMBD914E6327

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SMBD914; SMBD914E6327XT; SMBD914INTR; SMBD914XTINTR; SMBD914XTINTR; SP000010209

AC characteristics
Diode capacitance
V
Reverse recovery time
I
measured at I
Electrical Characteristics at T
Parameter
DC characteristics
Breakdown voltage
I
Forward voltage
I
I
I
I
Reverse current
V
Reverse current
V
V
V
Test circuit for reverse recovery time
Pulse generator: t
(BR)
F
F
F
F
F
R
R
R
R
R
= 10 mA, I
= 10 mA
= 10 mA
= 50 mA
= 150 mA
= 0 V, f = 20 MHz
= 20 V
= 75 V, T
= 20 V, T
= 75 V, T
= 100 µA
A
A
A
R
R
= 25 °C
= 150 °C
= 150 °C
= 10 mA, R
= 1mA
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
F
D.U.T.
L
= 100
A
i
= 50
Oscillograph
= 25°C, unless otherwise specified.


,
EHN00019


Oscillograph: R = 50
2
C
t
Symbol
V
V
I
I
R
R
rr
(BR)
F
D
C

min.
100
-
-
1pF
-
-
-
-
-
-
-
-
SMBD914/ MMBD914


, t
r
Values
= 0.35ns,
typ.
-
-
-
-
-
-
-
-
-
-
-
max.
1000
1250
Feb-18-2002
715
855
25
30
50
2
4
5
-
Unit
V
mV
nA
µA
pF
ns