STTH3006DPI STMicroelectronics, STTH3006DPI Datasheet

DIODE BOOST 600V 30A DOP31

STTH3006DPI

Manufacturer Part Number
STTH3006DPI
Description
DIODE BOOST 600V 30A DOP31
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH3006DPI

Voltage - Forward (vf) (max) @ If
3.6V @ 30A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
30A
Current - Reverse Leakage @ Vr
40µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
45ns
Mounting Type
Through Hole, Radial
Package / Case
DOP3I-2 Insulated (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
497-3245-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STTH3006DPI
Manufacturer:
ST
Quantity:
5 400
Part Number:
STTH3006DPI
Manufacturer:
STMAR
Quantity:
390
Part Number:
STTH3006DPI
Manufacturer:
ST
0
MAJOR PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
October 2003 - Ed: 2A
Symbol
I
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS
CORRECTORS
CONDITIONS
DESIGNED FOR HIGH dI
HYPERFAST
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
INSULATION
PLACEMENT
MOSFET
COMMON OR SEPARATE HEATSINK.
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
PACKAGE CAPACITANCE: C=16pF
Ipeak
V
F(RMS)
I
T
FSM
RRM
Tj
stg
I
V
Tj (max)
RM
t
rr
F
V
I
F(AV)
(max)
(typ.)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current
Peak current waveform
Storage temperature range
Maximum operating junction temperature
(typ.)
FLEXIBLE
RECOVERY
ON
MODE
AND
(2500V
SAME
HARD
HEATSINKING
POWER
RMS
F
/dt OPERATION.
HEATSINK
CURRENT
)
150 °C
Tandem 600V HYPERFAST BOOST DIODE
600 V
25 ns
6.7 A
2.4 V
30 A
SWITCHING
Parameter
ALLOWS
FACTOR
ON
TO
AS
tp = 10 ms sinusoidal
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dI
= 0.15 Tc = 120°C
F
/dt.
1
(insulated)
STTH3006DPI
DOP3I
2
-65 +150
Value
+ 150
600
180
32
50
1
2
Unit
°C
°C
V
A
A
A
1/5

Related parts for STTH3006DPI

STTH3006DPI Summary of contents

Page 1

... The TURBOSWITCH “H” ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at ) ALLOWS high dI HEATSINK AS ON Parameter sinusoidal = 0. 120°C STTH3006DPI DOP3I (insulated) /dt. F Value 600 32 180 50 -65 +150 ...

Page 2

... STTH3006DPI THERMAL AND POWER DATA Symbol Parameter R Junction to case thermal resistance th (j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 100 ms, < 380 µs, < evaluate the maximum conduction losses use the following equation : 1 0.023 I F(AV) F (RMS) ...

Page 3

... V =400V R V =400V 275 R T =125° =125°C j 250 225 F(AV) 200 175 150 125 100 350 400 450 500 STTH3006DPI T =125°C j (maximum values) T =125°C j (typical values) T =25°C (maximum values Peak reverse recovery current versus F(AV F(AV F(AV ...

Page 4

... STTH3006DPI Fig. 7: Reverse recovery softness factor versus dI /dt (typical values 0. F(AV =400V R T =125°C j 0.35 0.30 0.25 dI /dt(A/µ 100 150 200 250 300 Fig. 9: Transient peak forward voltage versus dI /dt (typical values ( F(AV =125° /dt(A/µ 100 ...

Page 5

... Sweden - Switzerland - United Kingdom - United States REF Package Weight DOP3I 4.46 g. © 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES www.st.com STTH3006DPI DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 1.45 1.55 0.057 0.061 14.35 15.60 0.565 0.614 0.5 0.7 ...

Related keywords