STPSC606D STMicroelectronics, STPSC606D Datasheet

DIODE SCHOTTKY 600V 6A TO-220AC

STPSC606D

Manufacturer Part Number
STPSC606D
Description
DIODE SCHOTTKY 600V 6A TO-220AC
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPSC606D

Voltage - Forward (vf) (max) @ If
1.7V @ 6A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
6A
Current - Reverse Leakage @ Vr
75µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
375pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10309-5

Available stocks

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Part Number:
STPSC606D
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STPSC606D
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Part Number:
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Features
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
September 2009
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC boost diode
600 V power Schottky silicon carbide diode
Doc ID 16284 Rev 1
Table 1.
Q
T
V
I
j (max)
F(AV)
C (typ)
RRM
Device summary
K
STPSC606G
STPSC606D
K
TO-220AC
D
2
PAK
NC
STPSC606
K
A
A
175 °C
600 V
6 nC
6 A
www.st.com
1/8
8

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STPSC606D Summary of contents

Page 1

... ST SiC diodes will boost the performance of PFC operations in hard switching conditions. September 2009 600 V power Schottky silicon carbide diode Table 1. I F(AV) V RRM T j (max (typ) Doc ID 16284 Rev 1 STPSC606 TO-220AC STPSC606D PAK STPSC606G Device summary 6 A 600 V 175 ° www.st.com 1/8 8 ...

Page 2

Characteristics 1 Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol V Repetitive peak reverse voltage RRM I Forward rms current F(RMS) I Average forward current F(AV) Surge non repetitive forward I FSM current I ...

Page 3

STPSC606 Figure 1. Forward voltage drop versus forward current (typical values =25 °C =25 ° 0.0 0.5 1.0 1.5 Figure 3. Peak forward current versus case temperature 70 δ=0.1 ...

Page 4

Characteristics Figure 5. Relative variation of thermal impedance junction to case versus pulse duration 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 t (s) 0.1 Single pulse p 0.0 1.E-05 1.E-04 1.E-03 1.E-02 Figure 7. Total capacitive charges versus ...

Page 5

STPSC606 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: convection (C) ● Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on ...

Page 6

Package information 2 Table 7. D PAK dimensions Figure 8. Footprint (dimensions in mm) 6/8 Ref FLAT ZONE NO LESS THAN ...

Page 7

... STPSC606 3 Ordering information Table 8. Ordering information Order code STPSC606D STPSC606G-TR 4 Revision history Table 9. Document revision history Date 24-Sep-2009 Marking Package STPSC606D TO-220AC 2 STPSC606G D PAK Revision 1 First issue. Doc ID 16284 Rev 1 Ordering information Weight Base qty Delivery mode 1. Tube 1.48 g 1000 Tape and reel ...

Page 8

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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