STTH3010PI STMicroelectronics, STTH3010PI Datasheet - Page 4

• Manufacturer Part Number: STTH3010PI
• Description: DIODE ULT FAST 1000V 30A DOP3I
• Manufacturer: STMicroelectronics

Specifications of STTH3010PI

• Voltage - Forward (vf) (max) @ If: 2V @ 30A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 30A
• Current - Reverse Leakage @ Vr: 15µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Through Hole, Radial
• Package / Case: DOP3I-2 Insulated (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 2 V
• Recovery Time: 100 ns
• Forward Continuous Current: 30 A
• Max Surge Current: 180 A
• Reverse Current Ir: 15 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6748-5; STTH3010PI

Characteristics
4/10
Figure 5.
Figure 7.
1.50
1.25
1.00
0.75
0.50
700
600
500
400
300
200
100
0
0
0
S factor
t (ns)
rr
50
50
Reverse recovery time versus
dI
Softness factor versus
dI
I
100
F
100
= 2 x I
F
F
/dt (typical values)
/dt (typical values)
F(AV)
dI /dt(A/µs)
150
150
F
200
200
I
F
= I
F(AV
250
250
dI /dt(A/µs)
)
F
300
300
350
I
350
F
=0.5 x I
F(AV)
400
400
I
F
V
T
= 2 x I
V
T
j
R
=125°C
j
R
=125°C
=600V
=600V
450
450
F(AV)
500
500
Figure 6.
Figure 8.
7
6
5
4
3
2
1
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Q (µC)
25
rr
50
V
T
j
R
=125°C
=600V
100
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
t
RR
S
factor
F
Q
50
/dt (typical values)
RR
150
200
I
RM
dI /dt(A/µs)
250
F
75
300
I
F
= 2 x I
T (°C)
j
350
F(AV)
100
Reference: T
I
400
F
= I
V
I
F
F(AV)
I
R
F
= I
=600V
=0.5 x I
F(AV)
STTH3010
450
j
=125°C
F(AV)
500
125