STTH1202DI STMicroelectronics, STTH1202DI Datasheet - Page 4

DIODE UFAST 200V 12A INS TO220AC

STTH1202DI

Manufacturer Part Number
STTH1202DI
Description
DIODE UFAST 200V 12A INS TO220AC
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH1202DI

Voltage - Forward (vf) (max) @ If
1.1V @ 12A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
12A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Through Hole
Package / Case
TO-220-2 Insulated, TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
497-7578-5
STTH1202DI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STTH1202DI
Manufacturer:
STMicroelectronics
Quantity:
298
Part Number:
STTH1202DI
Manufacturer:
SILICON
Quantity:
20 000
Part Number:
STTH1202DI
Manufacturer:
ST
0
Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
100
10
90
80
70
60
50
40
30
20
10
0
25
10
1
Q
C(pF)
t (ns)
rr
rr RM
V =160V
I =12A
F
R
;I
[T ]/I
Junction capacitance versus
reverse applied voltage (typical
values)
Reverse recovery time versus dI
(typical values)
Dynamic parameters versus
junction temperature
j
50
RM
[T =125°C]
T =25°C
j
j
10
I
RM
75
dI /dt(A/µs)
F
T (°C)
V (V)
100
j
R
Q
T =125°C
RR
j
100
100
125
V
OSC
F=1MHz
T =25°C
=30mV
j
V =160V
I =12A
F
R
RMS
1000
1000
150
F
/dt
Figure 6.
Figure 8.
200
180
160
140
120
100
14
12
10
80
60
40
20
8
6
4
2
0
0
10
10
I
Q (nC)
RM
rr
V =160V
I =12A
F
V =160V
I =12A
R
F
(A)
R
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
F
/dt (typical values)
T =125°C
F
j
dI /dt(A/µs)
dI /dt(A/µs)
/dt (typical values)
F
F
100
100
T =125°C
j
T =25°C
j
T =25°C
j
STTH1202
1000
1000

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