STTH810DI STMicroelectronics, STTH810DI Datasheet - Page 4

• Manufacturer Part Number: STTH810DI
• Description: DIODE ULT FAST 1000V 8A TO-220
• Manufacturer: STMicroelectronics

Specifications of STTH810DI

• Voltage - Forward (vf) (max) @ If: 2V @ 8A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 85ns
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-5163-5

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
25
20
15
10
2.5
2.0
1.5
1.0
0.5
0.0
5
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
0
Q (µC)
RM
0
25
rr
V
T
(A)
j
R
=125°C
T
=600V
V
50
R
j
=125°C
50
I
=600V
F
=0.5 x I
100
Peak reverse recovery current
versus dI
Reverse recovery charges
versus dI
100
Relative variations of dynamic
parameters versus junction
temperature
F(AV)
I
RM
Q
RR
50
S
factor
150
150
I
F
= I
F(AV)
200
200
F
F
/dt (typical values)
/dt (typical values)
dI /dt(A/µs)
250
t
250
RR
F
75
dI /dt(A/µs)
300
300
F
T (°C)
I
F
= 2 x I
350
j
350
F(AV)
100
Reference: T
I
400
400
F
= 2 x I
I
V
F
I
F
I
=0.5 x I
R
F
= I
=600V
= I
F(AV)
F(AV)
F(AV)
450
450
j
=125°C
F(AV)
500
500
125
Figure 6.
Figure 8.
Figure 10. Transient peak forward voltage
45
40
35
30
25
20
15
10
3.0
2.5
2.0
1.5
1.0
500
450
400
350
300
250
200
150
100
5
0
50
0
V
0
0
0
S factor
FP
t (ns)
rr
T
I
F
(V)
j
=125°C
= I
50
F(AV)
50
I
F
Reverse recovery time versus dI
(typical values)
(typical values)
versus dI
100
Softness factor versus dI
= 2 x I
100
100
F(AV)
dI /dt(A/µs)
150
150
F
200
200
200
I
F
= I
F
F(AV
/dt (typical values)
dI /dt(A/µs)
)
250
250
F
dI /dt(A/µs)
F
300
300
300
I
F
=0.5 x I
350
350
F(AV)
400
400
400
I
F
F
V
T
V
T
= 2 x I
j
j
/dt
R
=125°C
R
=125°C
=600V
=600V
STTH810
450
450
F(AV)
500
500
500
F
/dt