STPS3L60S STMicroelectronics, STPS3L60S Datasheet - Page 3

• Manufacturer Part Number: STPS3L60S
• Description: DIODE SCHOTTKY 60V 3A SMC
• Manufacturer: STMicroelectronics

Specifications of STPS3L60S

• Voltage - Forward (vf) (max) @ If: 700mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 55µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Current, Forward: 3 A
• Current, Reverse: 1 A
• Current, Surge: 75 A
• Package Type: DO-214AB (SMC)
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Voltage, Forward: 0.94 V
• Voltage, Reverse: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-2454-2

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
14
12
10
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
5E+1
1E+1
1E+0
1E-1
1E-2
1E-3
0.01
1E-3
8
6
4
2
0
0.1
0.01
IM(A)
1
P
I
M
0
P
ARM
IR(mA)
ARM p
(1µs)
5
(t )
=0.5
t
0.1
10 15 20 25 30 35 40 45 50 55 60
1E-2
1
Tc=150°C
Tc=125°C
Tc=100°C
Tc=75°C
t(s)
Tc=50°C
Tc=25°C
t (µs)
p
10
VR(V)
1E-1
100
Tc=100°C
Tc=25°C
Tc=50°C
1E+0
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 6: Relative variation of thermal impedance
junction to lead versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
500
200
100
50
20
10
1
0
1E-3
Zth(j-l)/Rth(j-l)
0
P
1
P
ARM
C(pF)
= 0.1
= 0.2
= 0.5
ARM p
Single pulse
(25°C)
(t )
25
1E-2
50
T (°C)
j
tp(s)
VR(V)
75
10
1E-1
100
STPS3L60S
=tp/T
125
F=1MHz
Tj=25°C
T
tp
1E+0
100
150
3/5