STPS3L60S STMicroelectronics, STPS3L60S Datasheet - Page 3
![DIODE SCHOTTKY 60V 3A SMC](/photos/5/36/53652/497-do-214ab_sml.jpg)
STPS3L60S
Manufacturer Part Number
STPS3L60S
Description
DIODE SCHOTTKY 60V 3A SMC
Manufacturer
STMicroelectronics
Specifications of STPS3L60S
Voltage - Forward (vf) (max) @ If
700mV @ 3A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
55µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Current, Forward
3 A
Current, Reverse
1 A
Current, Surge
75 A
Package Type
DO-214AB (SMC)
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Voltage, Forward
0.94 V
Voltage, Reverse
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
497-2454-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STPS3L60S
Manufacturer:
TOSHIBA
Quantity:
67 000
Company:
Part Number:
STPS3L60S
Manufacturer:
ST
Quantity:
54 000
Part Number:
STPS3L60S
Manufacturer:
VISHAY/威世
Quantity:
20 000
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
14
12
10
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
5E+1
1E+1
1E+0
1E-1
1E-2
1E-3
0.01
1E-3
8
6
4
2
0
0.1
0.01
IM(A)
1
P
I
M
0
P
ARM
IR(mA)
ARM p
(1µs)
5
(t )
=0.5
t
0.1
10 15 20 25 30 35 40 45 50 55 60
1E-2
1
Tc=150°C
Tc=125°C
Tc=100°C
Tc=75°C
t(s)
Tc=50°C
Tc=25°C
t (µs)
p
10
VR(V)
1E-1
100
Tc=100°C
Tc=25°C
Tc=50°C
1E+0
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 6: Relative variation of thermal impedance
junction to lead versus pulse duration.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
500
200
100
50
20
10
1
0
1E-3
Zth(j-l)/Rth(j-l)
0
P
1
P
ARM
C(pF)
= 0.1
= 0.2
= 0.5
ARM p
Single pulse
(25°C)
(t )
25
1E-2
50
T (°C)
j
tp(s)
VR(V)
75
10
1E-1
100
STPS3L60S
=tp/T
125
F=1MHz
Tj=25°C
T
tp
1E+0
100
150
3/5