STTH2R06 STMicroelectronics, STTH2R06 Datasheet - Page 4

• Manufacturer Part Number: STTH2R06
• Description: DIODE FAST 600V 2A HE DO41
• Manufacturer: STMicroelectronics

Specifications of STTH2R06

• Voltage - Forward (vf) (max) @ If: 1.7V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 2µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.7 V
• Recovery Time: 50 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 40 A
• Reverse Current Ir: 2 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3752-3

Characteristics
4/10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Figure 5.
Figure 7.
Figure 9.
300
250
200
150
100
300
250
200
150
100
25
50
50
0
0
0
0
t (ns)
t (ns)
fr
rr
50
100
I =2 x I
50
Reverse recovery time versus dI
(typical values)
F
Relative variations of dynamic
parameters versus junction
temperature
Forward recovery time versus dI
(typical values)
50
F(AV)
150
t
rr
I =I
F
F(AV)
200
100
dI /dt(A/µs)
dI /dt(A/µs)
I =0.5 x I
F
F
F
I
RM
T (°C)
250
j
75
F(AV)
Q
RR
300
150
350
100
400
200
V =1.1 x V max.
FR
Reference: T =125°C
T =125°C
I =I
F
j
V =400V
I =I
F(AV)
Doc ID 10757 Rev 3
F
R
450
V =400V
T =125°C
R
j
F
F(AV)
j
F
F
500
250
/dt
/dt
125
Figure 6.
Figure 8.
Figure 10. Junction capacitance versus
400
350
300
250
200
150
100
30
25
20
15
10
100
50
5
0
10
0
1
0
V
0
1
Q (nC)
C(pF)
FP
I =I
T =125°C
F
j
rr
V =400V
T =125°C
F(AV)
R
j
(V)
50
100
Reverse recovery charges versus
dI
Transient peak forward voltage
versus dI
reverse voltage applied
(typical values)
F
/dt (typical values)
10
100
200
dI /dt(A/µs)
dI /dt(A/µs)
F
/dt (typical values)
F
F
I =0.5 x I
F
I =2 x I
F
V (V)
I =I
F
R
F(AV)
F(AV)
F(AV)
150
300
100
200
400
STTH2R06
V
OSC
F=1MHz
T =25°C
=30mV
j
RMS
1000
500
250