STTH110 STMicroelectronics, STTH110 Datasheet - Page 3
STTH110
Manufacturer Part Number
STTH110
Description
DIODE ULTRA FAST 1KV 1A DO41
Manufacturer
STMicroelectronics
Datasheet
1.STTH110.pdf
(6 pages)
Specifications of STTH110
Voltage - Forward (vf) (max) @ If
1.7V @ 1A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Rectifier Type
Switching Diode
Configuration
Single
Peak Rep Rev Volt
1000V
Avg. Forward Curr (max)
1
Rev Curr
10uA
Peak Non-repetitive Surge Current (max)
20A
Forward Voltage
1.7V
Operating Temp Range
-50C to 175C
Package Type
DO-41
Rev Recov Time
75ns
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
2
Product
Ultra Fast Recovery Rectifier
Reverse Voltage
1000 V
Forward Voltage Drop
1.7 V
Recovery Time
75 ns
Forward Continuous Current
1 A
Max Surge Current
20 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Compliant
Other names
497-2444-3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STTH110
Manufacturer:
ST
Quantity:
50 000
Part Number:
STTH110
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
STTH110A
Manufacturer:
STMicroelectronics
Quantity:
18 503
Company:
Part Number:
STTH110A
Manufacturer:
STMicroelectronics
Quantity:
82
Part Number:
STTH110A
Manufacturer:
ST
Quantity:
20 000
STTH110
Figure 1.
Figure 3.
Figure 5.
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
110
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
90
80
70
60
50
40
30
20
10
1.E-01
0
0.0
P(W)
0
Z
R
epoxy FR4, leads = 10 mm
th(j-c)
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
th(j-a)
0.1
1
/R
(°C/W)
0.2
th(j-c)
Conduction losses versus average
current
Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-41)
Thermal resistance junction to
ambient versus copper surface
under each lead (DO-41)
1.E+00
2
0.3
δ = 0.05
epoxy printed circuit board FR4, copper thickness: 35 µm
3
0.4
0.5
4
δ = 0.1
I
F(AV)
1.E+01
S(cm²)
t (s)
p
0.6
5
(A)
δ = 0.2
0.7
6
0.8
1.E+02
δ = 0.5
7
0.9
δ
δ
=tp/T
=tp/T
8
1.0
T
δ = 1
T
Doc ID 9344 Rev 2
9
1.1
tp
tp
1.E+03
1.2
10
Figure 2.
Figure 4.
Figure 6.
100.0
140
130
120
110
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10.0
90
80
70
60
50
40
30
20
10
1.E-01
1.0
0.1
0
0.0
Z
R
0.0
th(j-c)
I
th(j-a)
δ = 0.5
Single pulse
FM
δ = 0.2
δ = 0.1
(A)
0.5
(typical values)
/R
0.5
(°C/W)
T =150°C
j
th(j-c)
1.0
Forward voltage drop versus
forward current
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4) (SMA)
Thermal resistance junction to
ambient versus copper surface
under each lead (SMA).
1.E+00
1.0
(maximum values)
epoxy printed circuit board FR4, copper thickness: 35 µm
T =150°C
1.5
j
1.5
2.0
2.0
1.E+01
S(cm²)
t (s)
V
p
FM
2.5
(maximum values)
(V)
2.5
T =25°C
3.0
j
3.0
3.5
1.E+02
Characteristics
δ
3.5
=tp/T
4.0
T
4.0
4.5
tp
1.E+03
4.5
5.0
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