STPS1L30M STMicroelectronics, STPS1L30M Datasheet - Page 4
![DIODE SCHOTTKY LDO 1A 30V STMITE](/photos/5/36/53648/stps1l30m_sml.jpg)
STPS1L30M
Manufacturer Part Number
STPS1L30M
Description
DIODE SCHOTTKY LDO 1A 30V STMITE
Manufacturer
STMicroelectronics
Datasheet
1.STPS1L30M.pdf
(6 pages)
Specifications of STPS1L30M
Voltage - Forward (vf) (max) @ If
390mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
390µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-216AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
497-8025-2
STPS1L30M
STPS1L30M
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STPS1L30M
Figure 9: Junction capacitance versus reverse
voltage applied (typical values)
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35µm, typical
values)
4/6
1000
250
200
150
100
100
50
10
0
0
R
1
C(pF)
th(j-a)
20
(°C/W)
40
60
80
S(mm²)
V (V)
100
R
10
120
140
160
V
OSC
F=1MHz
T =25°C
=30mV
j
180
RMS
100
200
Figure 10: Forward voltage drop versus
forward current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00
I
FM
V
(A)
FM
0.05
(V)
0.10
0.15
(typical values)
0.20
T =85°C
j
(maximum values)
0.25
T =85°C
j
0.30
0.35
(maximum values)
0.40
T =25°C
j
0.45
0.50