STTH102A STMicroelectronics, STTH102A Datasheet
STTH102A
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STTH102A Summary of contents
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... Negligible switching losses Low forward and reverse recovery times High junction temperature DESCRIPTION The STTH102A, which is using ST’s new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications ...
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... STTH102A STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test 5ms, < 380µs, < evaluate the maximum conduction losses use the following equation : 0. 0.130 I F(AV) F (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter trr Reverse recovery time tfr Forward recovery ...
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... Fig. 6: Reverse recovery time versus dI confidence). t (ns F=1MHz V =30mV osc T =25° 100 1000 1 STTH102A R =R th(j-a) th(j-l) R =120°C/W th(j-a) T (°C) amb 100 125 Forward voltage drop versus forward T T =125°C =125° (Maximum values) (Maximum values) T =25° ...
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... STTH102A Fig. 7: Peak reverse recovery current versus dI /dt (90% confidence (A) RM 3 =100V R 3.0 2.5 2.0 T =125°C j 1.5 1.0 0.5 dI /dt(A/µ Fig. 9: Relative variations of dynamic parameters versus junction temperature [Tj [Tj = 25° 3 /dt=200A/µ =100V R 3.0 2.5 2.0 1.5 1 ...
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... Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. REF 1.65 Package Weight SMA 0.07 g STMicroelectronics GROUP OF COMPANIES http://www.st.com STTH102A DIMENSIONS Millimeters Inches Min. Max. Min. Max. 1.90 2.70 0.075 0.106 0.05 0.20 0.002 0.008 1.25 1.65 0.049 0.065 0.15 ...