BAT46ZFILM STMicroelectronics, BAT46ZFILM Datasheet - Page 3

• Manufacturer Part Number: BAT46ZFILM
• Description: DIODE SCHOTTKY 100V SGL SOD-123
• Manufacturer: STMicroelectronics

Specifications of BAT46ZFILM

• Voltage - Forward (vf) (max) @ If: 450mV @ 10mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 150mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 10pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 1 A
• Configuration: Single
• Forward Voltage Drop: 1 V at 0.25 A
• Maximum Reverse Leakage Current: 5 uA at 75 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Rectifier Type: Small Signal Schottky Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.15A
• Rev Curr: 5uA
• Peak Non-repetitive Surge Current (max): 1A
• Forward Voltage: 1V
• Operating Temp Range: -65C to 150C
• Package Type: SOD-123
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Forward Current If(av): 150mA
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Voltage Vf Max: 1V
• Forward Surge Current Ifsm Max: 1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5559-2

BAT46 Series
Figure 1.
Figure 3.
Figure 5.
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.E+03
1.E+02
1.E+01
1.E+00
12
10
1.E-01
8
6
4
2
0
0
0.00
10
10
0.02
20
Average forward power dissipation
versus average forward current
Reverse leakage current versus
reverse applied voltage (typical
values)
Junction capacitance versus
reverse applied voltage (typical
values)
20
0.04
30
30
V
0.06
R
δ=0.05
(V)
40
40
0.08
I
F(AV)
50
δ=0.1
50
(A)
Tj=125 °C
Tj=100 °C
Tj=25 °C
Tj=50 °C
Tj=75 °C
0.10
60
60
δ=0.2
0.12
70
70
V
δ
δ=0.5
R
=tp/T
0.14
(V)
80
V
80
OSC
F=1 MHz
Tj=25 °C
=30 mV
T
0.16
90
90
tp
RMS
δ=1
0.18
100
100
Figure 2.
Figure 4.
Figure 6.
20
18
16
14
12
10
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.E-01
1.E-02
8
6
4
2
0
0.0
0
0
δ
=tp/T
V
R
0.1
=75 V
Average forward current versus
ambient temperature (δ = 1)
Reverse leakage current versus
junction temperature
forward current (typical values,
low-level)
Forward voltage drop versus
25
T
25
tp
0.2
50
50
Tj=125 °C
T
amb
0.3
75
T
(°C)
75
j
(°C)
0.4
100
100
V
FM
(V)
Characteristics
Tj=25 °C
0.5
125
125
0.6
150
150
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