RB751S-40TE61 Rohm Semiconductor, RB751S-40TE61 Datasheet - Page 2

• Manufacturer Part Number: RB751S-40TE61
• Description: DIODE SCHOTTKY 30V 30MA SOD523
• Manufacturer: Rohm Semiconductor

Specifications of RB751S-40TE61

• Voltage - Forward (vf) (max) @ If: 370mV @ 1mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 30mA
• Current - Reverse Leakage @ Vr: 500nA @ 30V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 2pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.03 A
• Max Surge Current: 0.2 A
• Configuration: Single
• Forward Voltage Drop: 0.37 V @ 0.001 A
• Maximum Reverse Leakage Current: 0.5 uA @ 30 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RB751S-40TE61TR

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Electrical characteristic curves
RB751S-40
10000
0.01
300
290
280
270
260
250
100
1000
0.1
20
15
10
10
100
5
0
1
10
0.001
Ta=75℃
0
Ta=125℃
100 200 300 400 500 600 700 800 900 100
Mounted on epoxy board
IM=1mA
FORWARD VOLTAGE：VF(mV)
1ms
VF-IF CHARACTERISTICS
Rth-t CHARACTERISTICS
IFSM DISPERSION MAP
300us
VF DIPERSION MAP
VF分布
time
AVE:267.4mV
0.1
TIME:t(s)
AVE:7.30A
IF=10mA
Ta=25℃
Ifsm
Ta=-25℃
10
8.3ms
Ta=25℃
n=30pcs
IF=1mA
Rth(j-a)
Rth(j-c)
1cyc
1000
0
0.001
0.04
0.03
0.02
0.01
0.00
1000
0.01
1000
20
15
10
100
5
0
0.1
900
800
700
600
500
400
300
200
100
10
1
0.00
1
0
0
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
0.01
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
NUMBER OF CYCLES
AVERAGE RECTIFIED
IR DISPERSION MAP
10
D=1/2
0.02
AVE:185.5nA
Ifsm
2/3
10
0.03
8.3ms
20
DC
1cyc
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.04
Ta=25℃
VR=30V
n=30pcs
8.3ms
0.05
30
100
0.003
0.002
0.001
0.1
10
1
10
10
9
8
7
6
5
4
3
2
1
0
0
9
8
7
6
5
4
3
2
1
0
0
0
1
Sin(θ＝180)
VR-Ct CHARACTERISTICS
VR-P
REVERSE VOLTAGE:VR(V)
REVERSE VOLTAGE:VR(V)
IFSM-t CHARACTERISTICS
Ct DISPERSION MAP
10
R
10
AVE:2.00pF
CHARACTERISTICS
DC
TIME:t(ms)
D=1/2
10
20
20
2011.03 - Rev.C
Ifsm
Ta=25℃
n=10pcs
f=1MHz
VR=1V
Data Sheet
f=1MHz
30
t
30
100