RB751S-40TE61 Rohm Semiconductor, RB751S-40TE61 Datasheet
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Manufacturer Part Number
RB751S-40TE61
Description
DIODE SCHOTTKY 30V 30MA SOD523
Manufacturer
Rohm Semiconductor
Specifications of RB751S-40TE61
Voltage - Forward (vf) (max) @ If
370mV @ 1mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
30mA
Current - Reverse Leakage @ Vr
500nA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
2pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.03 A
Max Surge Current
0.2 A
Configuration
Single
Forward Voltage Drop
0.37 V @ 0.001 A
Maximum Reverse Leakage Current
0.5 uA @ 30 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB751S-40TE61TR
Available stocks
Part Number:
RB751S-40TE61
Part Number:
RB751S-40TE61
Part Number:
RB751S-40TE61
Part Number:
RB751S-40TE61
Low current rectification
1) Ultra small mold type. (EMD2)
2) Low V
3) High reliability
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average retified forward current
Forward currnt surge peak(60Hz/1cyc)
Junction temperature
Storage temperature
Forward voltage
Reverse current
Capacitance between terminals
RB751S-40
Schottky barrier diode
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
F
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
Tstg
V
I
V
FSM
V
Ct
Io
Tj
I
RM
R
R
F
Dimensions (Unit : mm)
JEDEC :SOD-523
JEITA : SC-79
ROHM : EMD2
Min.
0.8±0.05
0.90±0.05
-
-
-
0.3±0.05
0.95±0.06
4.0±0.1
dot (year week factory)
-40 to +125
0
Limits
200
125
Typ.
40
30
30
2
-
-
2.0±0.05
Empty pocket
空ポケット
1/3
Max.
0.37
0.5
-
4.0±0.1
0.6±0.1
φ1.5±0.05
φ1.55±0.05
Unit
Unit
mA
mA
μA
°C
°C
pF
V
V
V
0.12±0.05
I
V
V
F
2.0±0.05
=1mA
R
R
=30V
=1V , f=1MHz
Structure
Land size figure (Unit : mm)
EMD2
φ0.5
Conditions
Data Sheet
0.8
2011.03 - Rev.C
0.2
0.2±0.05
0.75±0.05
0.76±0.05
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RB751S-40TE61 Summary of contents
... Schottky barrier diode RB751S-40 Applications Low current rectification Features 1) Ultra small mold type. (EMD2) 2) Low High reliability Construction Silicon epitaxial planar Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average retified forward current Forward currnt surge peak(60Hz/1cyc) ...
... RB751S-40 Electrical characteristic curves 100 Ta=125℃ 10 Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 0.01 0 100 200 300 400 500 600 700 800 900 100 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS VF分布 300 Ta=25℃ IF=1mA 290 n=30pcs 280 270 260 AVE:267 ...
... RB751S-40 0 0.08 t D=t/T VR=15V DC 0.06 T Tj=125℃ D=1/2 0.04 0.02 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved D=1/2 0.04 0.02 Sin(θ＝180 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ ...
ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...
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