BAS85,115 NXP Semiconductors, BAS85,115 Datasheet - Page 5

DIODE SCHOTTKY 30V 200MA SOD80C

BAS85,115

Manufacturer Part Number
BAS85,115
Description
DIODE SCHOTTKY 30V 200MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS85,115

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2.3µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
5 A
Configuration
Single
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2.3 uA @ 25 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1609-2
933876540115
BAS85 T/R
NXP Semiconductors
8. Package outline
9. Packing information
BAS85
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description
BAS85
Fig 5.
For further information and the availability of packing methods, see
Package outline SOD80C
Packing methods
SOD80C 4 mm pitch, 8 mm tape and reel
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 September 2010
Dimensions in mm
0.3
3.7
3.3
0.3
Section
1.60
1.45
[1]
06-03-16
13.
Schottky barrier diode
Packing quantity
2500
-115
© NXP B.V. 2010. All rights reserved.
BAS85
10000
-135
5 of 10

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