BAS85,115 NXP Semiconductors, BAS85,115 Datasheet - Page 5

• Manufacturer Part Number: BAS85,115
• Description: DIODE SCHOTTKY 30V 200MA SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAS85,115

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2.3µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 5 A
• Configuration: Single
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2.3 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1609-2; 933876540115; BAS85 T/R

NXP Semiconductors
8. Package outline
9. Packing information
BAS85
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description
BAS85
Fig 5.
For further information and the availability of packing methods, see
Package outline SOD80C
Packing methods
SOD80C 4 mm pitch, 8 mm tape and reel
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 September 2010
Dimensions in mm
0.3
3.7
3.3
0.3
Section
1.60
1.45
[1]
06-03-16
13.
Schottky barrier diode
Packing quantity
2500
-115
© NXP B.V. 2010. All rights reserved.
BAS85
10000
-135
5 of 10