BAT85,113 NXP Semiconductors, BAT85,113 Datasheet - Page 5

• Manufacturer Part Number: BAT85,113
• Description: DIODE SCHOTTKY 30V 200MA DO34
• Manufacturer: NXP Semiconductors

Specifications of BAT85,113

• Package / Case: DO-204AG, DO-34, Axial
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A @ Ta=50C
• Max Surge Current: 5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1617-2; 933624760113; BAT85 T/R

NXP Semiconductors
2000 May 25
handbook, halfpage
Schottky barrier diode
I F
I R
Fig.6 Reverse recovery definitions.
dI
dt
F
Q
r
t f
MRC129 - 1
10%
90%
t
5
Product data sheet
BAT85