BAV199LT1G ON Semiconductor, BAV199LT1G Datasheet - Page 2

• Manufacturer Part Number: BAV199LT1G
• Description: DIODE SWITCH DUAL 70V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAV199LT1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 5nA @ 70V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 3µs
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Dual Series
• Peak Rep Rev Volt: 70V
• Avg. Forward Curr (max): 0.715
• Rev Curr: 0.005uA
• Peak Non-repetitive Surge Current (max): 2A
• Forward Voltage: 1.25@0.15AV
• Operating Temp Range: -65C to 150C
• Package Type: SOT-23
• Rev Recov Time: 3000ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Product: Switching Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.715 A
• Max Surge Current: 2 A
• Recovery Time: 3000 ns
• Forward Voltage Drop: 1 V
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAV199LT1GOSTR

+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance
Forward Voltage
Reverse Recovery Time
50 W OUTPUT
(I
(V
(V
(V
(I
(I
(I
(I
(I
GENERATOR
(BR)
F
F
F
F
F
R
R
R
PULSE
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
= I
= 70 Vdc)
= 70 Vdc, T
= 0 V, f = 1.0 MHz)
820 W
= 100 mAdc)
R
= 10 mAdc) (Figure 1)
0.1 mF
J
2.0 k
100 mH
= 150°C)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
Characteristic
DUT
2. Input pulse is adjusted so I
3. t
Figure 1. Recovery Time Equivalent Test Circuit
p
(T
» t
A
rr
= 25°C unless otherwise noted) (EACH DIODE)
0.1 mF
OSCILLOSCOPE
50 W INPUT
SAMPLING
http://onsemi.com
R(peak)
V
2
R
t
is equal to 10 mA.
r
INPUT SIGNAL
10%
90%
t
p
Symbol
V
C
t
V
(BR)
I
t
R
rr
D
F
F
) of 10 mA.
I
I
R
F
Min
70
−
−
−
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
1000
1100
1250
= 10 mA; MEASURED
Max
R(REC)
900
5.0
2.0
3.0
80
t
−
rr
i
R(REC)
= 1.0 mA)
= 1.0 mA
mVdc
nAdc
Unit
Vdc
pF
ms
t