BAV199LT1G ON Semiconductor, BAV199LT1G Datasheet

DIODE SWITCH DUAL 70V SOT23

BAV199LT1G

Manufacturer Part Number
BAV199LT1G
Description
DIODE SWITCH DUAL 70V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAV199LT1G

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5nA @ 70V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
3µs
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Dual Series
Peak Rep Rev Volt
70V
Avg. Forward Curr (max)
0.715
Rev Curr
0.005uA
Peak Non-repetitive Surge Current (max)
2A
Forward Voltage
1.25@0.15AV
Operating Temp Range
-65C to 150C
Package Type
SOT-23
Rev Recov Time
3000ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Product
Switching Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.715 A
Max Surge Current
2 A
Recovery Time
3000 ns
Forward Voltage Drop
1 V
Operating Temperature Range
- 65 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV199LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV199LT1G
Manufacturer:
LITTLEFUSE
Quantity:
12 000
Part Number:
BAV199LT1G
Manufacturer:
ON
Quantity:
90 000
Part Number:
BAV199LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAV199LT1G
Manufacturer:
ONSEMI
Quantity:
20 000
Company:
Part Number:
BAV199LT1G
Quantity:
72 000
Part Number:
BAV199LT1G / BAV199
Manufacturer:
ON/安森美
Quantity:
20 000
BAV199LT1G
Dual Series Switching
Diode
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
(Note 1)
(Averaged Over Any 20 ms Period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
Total Device Dissipation
FR−5 Board (Note 1), T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2), T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
Low Leakage Current Applications
Medium Speed Switching Times
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
Characteristic
Rating
A
= 25°C
A
= 25°C
I
Symbol
Symbol
FM(surge)
T
V
I
R
R
I
I
J
F(AV)
FRM
FSM
V
RRM
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−65 to +150
Value
Max
215
500
715
450
225
556
300
417
2.0
1.0
0.5
1.8
2.4
70
70
1
mW/°C
mW/°C
mAdc
mAdc
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Adc
mW
mW
°C
†For information on tape and reel specifications,
BAV199LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ANODE
ORDERING INFORMATION
1
JY = Specific Device Code
M = Date Code*
G
MARKING DIAGRAM
http://onsemi.com
CATHODE/ANODE
= Pb−Free Package
(Pb−Free)
Package
SOT−23
1
CASE 318
STYLE 11
SOT−23
JY M G
3
Publication Order Number:
2
G
3
3000/Tape & Reel
CATHODE
Shipping
BAV199LT1/D
2

Related parts for BAV199LT1G

BAV199LT1G Summary of contents

Page 1

... R 556 °C/W qJA P D 300 mW 2.4 mW/°C 417 R °C/W qJA −65 to +150 °C J stg BAV199LT1G †For information on tape and reel specifications, 1 http://onsemi.com ANODE CATHODE CATHODE/ANODE CASE 318 SOT−23 STYLE 11 MARKING DIAGRAM Specific Device Code M = Date Code* = Pb−Free Package ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 mAdc) (BR) Reverse Voltage Leakage Current ( Vdc Vdc 150° Diode Capacitance ( 1.0 ...

Page 3

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

Related keywords