BAS40-04LT1G ON Semiconductor, BAS40-04LT1G Datasheet - Page 5

• Manufacturer Part Number: BAS40-04LT1G
• Description: DIODE SCHOTTKY DUAL 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAS40-04LT1G

• Voltage - Forward (vf) (max) @ If: 1V @ 40mA
• Current - Reverse Leakage @ Vr: 1µA @ 25V
• Current - Average Rectified (io) (per Diode): 120mA (DC)
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.12 A
• Max Surge Current: 600 A
• Configuration: Dual Series
• Forward Voltage Drop: 1 V @ 0.04 A
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 5 pF
• Current, Forward: 120 mA
• Current, Surge: 600 mA
• Package Type: SOT-23 (TO-236AB)
• Power Dissipation: 225 mW
• Primary Type: Schottky Barrier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Voltage, Forward: 1 V
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BAS40-04LT1GOSTR

Final Product/Process Change Notification #16266
MMSZ5270BT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
MMSZ9V1ET1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
MBR0520LT3G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=130C RH=85% p=~18.8psig
bias=80% rated V or100V Max
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
1008 hrs
15000 cyc
1008 hrs
15000 cyc
Interval:
Interval:
Interval:
1000 cyc
1008 hrs
1000 cyc
1008 hrs
15000 cyc
96 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
1000 cyc
96 hrs
1008 hrs
96 hrs
Results
0/160
0/640
0/160
0/160
0/160
0/160
0/160
0/4
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/4
0/60
0/2
0/30
0/30
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