BAS40-04LT1G ON Semiconductor, BAS40-04LT1G Datasheet

BAS40-04LT1G

Manufacturer Part Number

BAS40-04LT1G

Description

DIODE SCHOTTKY DUAL 40V SOT23

Manufacturer

ON Semiconductor

Datasheets

1.BAS40-04LT1.pdf (4 pages)

2.BAS40-04LT1G.pdf (3 pages)

Specifications of BAS40-04LT1G

Voltage - Forward (vf) (max) @ If

1V @ 40mA

Current - Reverse Leakage @ Vr

1µA @ 25V

Current - Average Rectified (io) (per Diode)

120mA (DC)

Voltage - Dc Reverse (vr) (max)

40V

Diode Type

Schottky

Speed

Small Signal =< 200mA (Io), Any Speed

Diode Configuration

1 Pair Series Connection

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Product

Schottky Diodes

Peak Reverse Voltage

40 V

Forward Continuous Current

0.12 A

Max Surge Current

600 A

Configuration

Dual Series

Forward Voltage Drop

1 V @ 0.04 A

Maximum Reverse Leakage Current

1 uA

Operating Temperature Range

- 55 C to + 150 C

Mounting Style

SMD/SMT

Capacitance, Junction

5 pF

Current, Forward

120 mA

Current, Surge

600 mA

Package Type

SOT-23 (TO-236AB)

Power Dissipation

225 mW

Primary Type

Schottky Barrier

Speed, Switching

Fast

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-55 to +150 °C

Voltage, Forward

1 V

Voltage, Reverse

40 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BAS40-04LT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAS40-04LT1G

Manufacturer:

Diptronics

Quantity:

60 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAS40-04LT1G

Manufacturer:

Quantity:

33 000

Company:

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Part Number:

BAS40-04LT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

BAS40-04LT1G

Manufacturer:

ON/安森美

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20 000

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Current page: 1 of 4
Download datasheet (120Kb)

BAS40-04LT1G

Dual Series

Schottky Barrier Diode

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•

August, 2009 − Rev. 10

MAXIMUM RATINGS

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ minimum pad.

2. FR−4 @ 1.0 x 1.0 in pad.

Reverse Voltage

Forward Power Dissipation

Operating Junction and Storage Temper-

ature Range

Forward Continuous Current

Single Forward Current

Thermal Resistance

Junction−to−Ambient

These Schottky barrier diodes are designed for high speed switching

Compliant

Extremely Fast Switching Speed

Low Forward Voltage

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

@ T

Derate above 25°C

= 25°C

Rating

t v 10 ms

t v 1 s

Symbol

FSM

qJA

stg

(Note 1)

(Note 2)

−55 to

Value

+150

225

120

200

600

508

311

1.8

mW/°C

°C/W

Unit

°C

†For information on tape and reel specifications,

BAS40−04LT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SCHOTTKY BARRIER DIODES

SOT−23 (TO−236AB)

*Date Code orientation and/or overbar may

Device

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

CASE 318

STYLE 11

ANODE

ORDERING INFORMATION

http://onsemi.com

= Specific Device Code

= Date Code*

= Pb−Free Package

40 VOLTS

CATHODE/ANODE

Package

(Pb−Free)

SOT−23

Publication Order Number:

3000/ Tape & Reel

MARKING

DIAGRAM

CATHODE

BAS40−04LT1/D

CB MG

Shipping

†

Related parts for BAS40-04LT1G

BAS40-04LT1G Summary of contents

Page 1

... BAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic Reverse Breakdown Voltage Total Capacitance Reverse Leakage ( Forward Voltage Forward Voltage Forward Voltage = 25°C unless otherwise noted) A Symbol mA) R (BR 1.0 V, ...

Page 3

V , FORWARD VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage 3.5 3.0 2.5 2.0 1.5 1.0 0 100 ...

Page 4

... E STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAS40−04LT1/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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