BAS40-04LT1G ON Semiconductor, BAS40-04LT1G Datasheet - Page 3

• Manufacturer Part Number: BAS40-04LT1G
• Description: DIODE SCHOTTKY DUAL 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAS40-04LT1G

• Voltage - Forward (vf) (max) @ If: 1V @ 40mA
• Current - Reverse Leakage @ Vr: 1µA @ 25V
• Current - Average Rectified (io) (per Diode): 120mA (DC)
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.12 A
• Max Surge Current: 600 A
• Configuration: Dual Series
• Forward Voltage Drop: 1 V @ 0.04 A
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 5 pF
• Current, Forward: 120 mA
• Current, Surge: 600 mA
• Package Type: SOT-23 (TO-236AB)
• Power Dissipation: 225 mW
• Primary Type: Schottky Barrier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Voltage, Forward: 1 V
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BAS40-04LT1GOSTR

A
A1
E
1
3
D
e
2
b
H
E
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
SOLDERING FOOTPRINT*
PACKAGE DIMENSIONS
0.8
VIEW C
L1
SOT-23 (TO-236)
BAS40-04L T1
L
CASE 318-08
ISSUE AN
q
0.25
4
c
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD
0.079
STYLE 11:
2.0
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
318-08.
PIN 1. ANODE
DIM
inches
A1
H
L1
A
b
D
E
c
e
L
mm
E
2. CATHODE
3. CATHODE-ANODE
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
1.11
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX