BAT30SFILM STMicroelectronics, BAT30SFILM Datasheet - Page 3

• Manufacturer Part Number: BAT30SFILM
• Description: DIODE SCHOTTKY 300MA SER SOT-23
• Manufacturer: STMicroelectronics

Specifications of BAT30SFILM

• Voltage - Forward (vf) (max) @ If: 530mV @ 300mA
• Current - Reverse Leakage @ Vr: 5µA @ 30V
• Current - Average Rectified (io) (per Diode): 300mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-5700-2

BAT30
Table 5.
Figure 1.
Figure 3.
Symbol
C
1.E+00
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
1.E-01
1.E-02
0.00
1.E-03
P (W)
Diode capacitance
Single pulse
SOT-23
Dynamic characteristics
0.05
Power dissipation versus average
forward current
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.E-02
δ=0.05
0.10
Parameter
δ=0.1
1.E-01
0.15
δ=0.2
I
F(AV)
t
P
(s)
(A)
0.20
1.E+00
δ=0.5
0.25
Alumine substrate
10 x 8 x 0.5 mm
1.E+01
δ
=tp/T
V
V
V
R
R
R
δ=1
0.30
T
= 0 V, F = 1 MHz
= 1 V, F = 1 MHz
= 10 V, F = 1 MHz
Doc ID 12564 Rev 3
tp
1.E+02
0.35
Test conditions
Figure 2.
Figure 4.
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.E+00
1.E-01
1.E-02
1.E-03
0
1.E-03
I
F(AV)
δ
(A)
=tp/T
SOT-323/SOD-323
Single pulse
Average forward current versus
ambient temperature (δ = 1)
Relative variation of thermal
impedance junction to ambient
versus pulse duration
25
1.E-02
T
tp
Min.
1.E-01
50
-
-
-
1.E+00
t
75
P
(s)
T
amb
Typ
22
14
6
(° C)
Coppr thickness = 35 µm
Epoxy printed board FR4
Copper surface = 2.25 mm 2
1.E+01
100
Characteristics
Max.
1.E+02
-
-
-
125
1.E+03
Unit
150
pF
3/14