BYT230Y-400 STMicroelectronics, BYT230Y-400 Datasheet - Page 4

• Manufacturer Part Number: BYT230Y-400
• Description: DIODE FAST REC 30A 400V MAX247
• Manufacturer: STMicroelectronics

Specifications of BYT230Y-400

• Voltage - Forward (vf) (max) @ If: 1.5V @ 30A
• Current - Reverse Leakage @ Vr: 35µA @ 400V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 400V
• Reverse Recovery Time (trr): 100ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: MAX247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BYT230Y-400
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 9: Recovery current versus dI
Fig. 11: Forward recovery time versus dI
diode).
4/5
100
50
10
1.50
1.25
1.00
0.75
0.50
0.25
0.00
50
20
10
1
10
IRM(A)
1
0
C(pF)
tfr(µs)
90% confidence
IF=IF(av)
Tj=100°C
20
100
200
50
10
dIF/dt(A/µs)
dIF/dt(A/µs)
VR(V)
100
300
F
/dt (per diode).
200
400
90% confidence
Tj=100°C
IF=IF(av)
100
F
F=1MHz
Tj=25°C
/dt (per
200
500
500
Fig. 8: Recovery charges versus dI
Fig. 10: Transient peak forward versus dI
diode).
Fig. 12:
temperature.
30
25
20
15
10
1000
1.50
1.25
1.00
0.75
0.50
0.25
100
5
0
10
0
VFP(V)
10
0
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
Qrr(nC)
90% confidence
90% confidence
IF=IF(av)
Tj=100°C
IF=IF(av)
Tj=100°C
100
25
Dynamic parameters versus junction
20
IRM
50
Qrr
200
50
dIF/dt(A/µs)
dIF/dt(A/µs)
Tj(°C)
75
300
100
100
F
/dt (per diode).
200
400
125
F
/dt (per
500
500
150