BYV72EW-200,127 NXP Semiconductors, BYV72EW-200,127 Datasheet - Page 4
![DIODE FAST DUAL 30A 200V TO247](/photos/5/32/53255/568-to-247-3_sot429_sml.jpg)
BYV72EW-200,127
Manufacturer Part Number
BYV72EW-200,127
Description
DIODE FAST DUAL 30A 200V TO247
Manufacturer
NXP Semiconductors
Datasheet
1.BYV72EW-200127.pdf
(6 pages)
Specifications of BYV72EW-200,127
Voltage - Forward (vf) (max) @ If
1.2V @ 30A
Current - Reverse Leakage @ Vr
100µA @ 200V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
28ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1668-5
934047080127
BYV72EW-200
934047080127
BYV72EW-200
Philips Semiconductors
October 1998
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
50
40
30
20
10
Fig.8. Maximum I
Fig.7. Maximum t
100
0.1
0
10
10
1
1
0
1
IF / A
1
trr / ns
Irrm / A
Tj = 150 C
Tj = 25 C
I
F
= f(V
0.5
F
rrm
); parameter T
rr
-dIF/dt (A/us)
dIF/dt (A/us)
typ
at T
at T
VF / V
IF=1A
10
10
j
j
= 25 ˚C; per diode
= 25 ˚C; per diode
IF=20A
IF=20A
1.0
max
j
IF=1A
100
1.5
100
4
Fig.11. Transient thermal impedance; per diode;
Fig.10. Maximum Q
0.001
100
1.0
0.01
10
0.1
10
1.0
1
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
10us
100us
Z
pulse width, tp (s)
th j-mb
IF=20A
-dIF/dt (A/us)
10A
1ms
5A
2A
1A
s
at T
= f(t
10
P
D
10ms 100ms
BYV72EW series
j
p
= 25 ˚C; per diode
).
t
p
Product specification
T
D =
BYV42E
T
t
p
t
1s
Rev 1.200
100
10s