BAV99E6327 Infineon Technologies, BAV99E6327 Datasheet - Page 2

• Manufacturer Part Number: BAV99E6327
• Description: DIODE SWITCHING 80V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BAV99E6327

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAV99E6327XT; BAV99INTR; BAV99XTINTR; BAV99XTINTR; SP000010350

Electrical Characteristics at T
Parameter
DC characteristics
Breakdown voltage
I
Forward voltage
I
I
I
I
Reverse current
V
Reverse current
V
V
AC characteristics
Diode capacitance
V
Reverse recovery time
I
measured at I
Test circuit for reverse recovery time
Pulse generator: t
(BR)
F
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 10 mA, I
= 70 V
= 25 V, T
= 70 V, T
= 0 V, f = 1 MHz
= 100 µA
A
A
R
R
= 150 °C
= 150 °C
= 10 mA, R
= 1mA
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
F
D.U.T.
L
= 100
A
i
= 50
= 25°C, unless otherwise specified.


Oscillograph
,

EHN00019
Oscillograph: R = 50
2
Symbol
V
V
I
I
C
t
R
R
rr
(BR)
F
D
C


min.
70
1pF
-
-
-
-
-
-
-
-
-

, t
r
Values
= 0.35ns,
typ.
-
-
-
-
-
-
-
-
-
-
max.
1000
1250
715
855
2.5
1.5
Jul-30-2001
30
50
6
-
BAV99
Unit
V
mV
µA
pF
ns